v rrm = 45 v - 100 v i f(av) = 600 a features ? high surge capability three tower package ? types from 45 v to 100 v v rr m ? isolation type package ? electrically isolated base plate ? not esd sensitive parameter symbol mbrt60045(r) mbrt60060(r) unit repetitive peak reverse voltage v rrm 45 60 v rms reverse voltage v rms 32 42 v dc blocking voltage v dc 45 60 v conditions 100 70 100 80 mbrt60045 thru MBRT600100R mbrt600100(r) 80 56 mbrt60080(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) silicon power schottk y diode dc blocking voltage v dc 45 60 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol mbrt60045(r) mbrt60060(r) unit average forward current (per pkg) i f(av) 600 600 a maximum instantaneous forward voltage (per leg) 0.75 0.80 11 10 10 50 50 thermal characteristics maximum thermal resistance, junction - case (per leg) r jc 0.28 0.28 c/w a t j = 100 c 10 10 peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine 4000 4000 v -55 to 150 -55 to 150 100 80 t c =125 c 600 600 4000 4000 -55 to 150 mbrt600100(r) 11 mbrt60080(r) 0.28 t j = 150 c 0.28 0.84 0.84 50 ma t j = 25 c i fm = 300 a, t j = 25 c conditions -55 to 150 electrical characteristics, at tj = 25 c, unless otherwise specified maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r v f 50 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbrt60045 thru MBRT600100R www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbrt60045 thru MBRT600100R www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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